Operation Principles of ZnO/Al 2 O 3 ‐AlDMP/ZnO Stacked‐Channel Ternary Thin‐Film Transistor-Reference-Cited by-同舟云学术

Operation Principles of ZnO/Al 2 O 3 ‐AlDMP/ZnO Stacked‐Channel Ternary Thin‐Film Transistor

Published:2021-05-09 Issue:6 Volume:7 Page:2100247
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kim So‐Young¹,Kim Kiyung¹,Kim A. Reum²,Lee Ho‐In¹,Lee Yongsu¹,Kim Seung‐Mo¹,Yu Sung Ho³,Lee Hae‐Won¹,Hwang Hyeon Jun¹,Sung Myung Mo³,Lee Byoung Hun¹^ORCID

Affiliation:

1. Center for Semiconductor Technology Convergence Department of Electrical Engineering, Pohang University of Science and Technology Cheongam‐ro 77, Nam‐gu, Pohang Gyeongbuk 37673 Republic of Korea

2. School of Materials Science and Engineering Gwangju Institute of Science and Technology Cheomdan‐gwagiro 123, Buk‐gu Gwangju 61005 Republic of Korea

3. Department of Chemistry Hanyang University Wangsimni‐ro 222, Seongdong‐gu Seoul 04763 Republic of Korea

Funder

Ministry of Education

Ministry of Science, ICT and Future Planning

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100247

Reference24 articles.

1. Scaling MOSFETs to the Limit: A Physicists's Perspective