Highly Stable Forming‐Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between CC Bonding Complexes-Reference-Cited by-同舟云学术

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Highly Stable Forming‐Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between CC Bonding Complexes

Published:2021-11-11 Issue: Volume: Page:2100660
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Hyeon Da Seul¹,Jang Gabriel¹,Min SunHwa²,Hong Jin Pyo¹²^ORCID

Affiliation:

1. Research Institute of Natural Science Department of Physics Hanyang University Seoul 133‐791 South Korea

2. Research Institute for Convergence of Basic Science Division of Nanoscale Semiconductor Engineering Hanyang University Seoul 133‐791 South Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100660

Reference39 articles.

1. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

2. Nanoscale resistive switching memory devices: a review

3. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

4. Electrochemical metallization memories—fundamentals, applications, prospects

5. Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Overview of amorphous carbon memristor device, modeling, and applications for neuromorphic computing;Nanotechnology Reviews;2024-01-01

2. Design of Ultra-High Density Archival Storage Memory with Nanoprobe and Patterned Oxygenated Amorphous Carbon with Metal Nanoclusters;Journal of Nanoelectronics and Optoelectronics;2024-01-01

3. Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching;Advanced Electronic Materials;2023-01-19

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