Bio‐Voltage Memristors: From Physical Mechanisms to Neuromorphic Interfaces

Author:

Wang Saisai1,Wang Rui2,Cao Yaxiong1,Ma Xiaohua2,Wang Hong2ORCID,Hao Yue2

Affiliation:

1. Key Laboratory of Wide Band Gap Semiconductor Technology School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 P. R. China

2. Key Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an 710071 P. R. China

Abstract

AbstractWith the rapid development of emerging artificial intelligence technology, brain–computer interfaces are gradually moving from science fiction to reality, which has broad application prospects in the field of intelligent robots. Looking for devices that can connect and communicate with living biological tissues is expected to realize brain–computer interfaces and biological integration interfaces. Brain‐like neuromorphic devices based on memristors may have profound implications for bridging electronic neuromorphic and biological nervous systems. Ultra‐low working voltage is required if memristors are to be connected directly to biological nerve signals. Therefore, inspired by the high‐efficient computing and low power consumption of biological brain, memristors directly driven by the electrical signaling requirements of biological systems (bio‐voltage) are not only meaningful for low power neuromorphic computing but also very suitable to facilitate the integrated interactions with living biological cells. Herein, attention is focused on a detailed analysis of a rich variety of physical mechanisms underlying the various switching behaviors of bio‐voltage memristors. Next, the development of bio‐voltage memristors, from simulating artificial synaptic and neuronal functions to broad application prospects based on neuromorphic computing and bio‐electronic interfaces, is further reviewed. Furthermore, the challenges and the outlook of bio‐voltage memristors over the research field are discussed.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Chinese Academy of Sciences

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

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