Biomaterial/Organic Heterojunction Based Memristor for Logic Gate Circuit Design, Data Encryption, and Image Reconstruction

Author:

Gao Kaikai123,Sun Bai123ORCID,Cao Zelin123,Duan Xuegang123,Yan Wentao123,Tong Guoqing4,Zhou Guangdong5,Chen Xiaoliang12,Shao Jinyou12

Affiliation:

1. Frontier Institute of Science and Technology (FIST) Xi'an Jiaotong University Xi'an Shaanxi 710049 China

2. Micro‐and Nano‐technology Research Center State Key Laboratory for Manufacturing Systems Engineering Xi'an Jiaotong University Xi'an Shaanxi 710049 China

3. National Local Joint Engineering Research Center for Precision Surgery & Regenerative Medicine the First Affiliated Hospital of Xi'an Jiaotong University Xi'an Shaanxi 710049 China

4. Department of Reproductive Medicine The First Affiliated Hospital of Xi'an Jiaotong University Xi'an Shaanxi 710061 China

5. College of Artificial Intelligence Brain‐inspired Computing & Intelligent Control of Chongqing Key Lab Southwest University Chongqing 400715 China

Abstract

AbstractBenefiting from powerful logic‐computing, higher packaging density, and extremely low electricity consumption, memristors are regarded as the most promising next‐generation of electric devices and are capable of realizing brain‐like neuromorphic computation. However, the design of emerging circuit devices based on memristors and their potential application in unconventional fields are very meaningful for achieving some tasks that traditional electronic devices cannot accomplish. Herein, a Cu/PEDOT:PSS‐PP:PVDF/Ti structured memristor is fabricated by using the polyvinylidene difluoride (PVDF) dopped biomaterial papaya peel (PP) and organic poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) heterojunction as functional layer, which can be switched among resistive switching, self‐rectification effect, and capacitive behavior by adjusting the voltage bias/scan rate. Through further fitting of the data and simulating interfacial group reactions, this work innovatively proposes a charge conduction mode of device driven by Fowler–Nordheim tunneling, complexation reactions, and PEDOT:PSS pore removal. Finally, the regular logic gate and adder circuits are constructed based on the fabricated memristor, while a fully adder‐based encryption unit is designed to realize data encryption and image reconstruction. This work renders memristor compatible with logic circuits, widening a path toward data encryption and information security.

Funder

National Natural Science Foundation of China

Xi’an Jiaotong University

Publisher

Wiley

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