1/ f Noise Characterization of Bilayer MoS 2 Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics-Reference-Cited by-同舟云学术

1/ f Noise Characterization of Bilayer MoS 2 Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics

Published:2021-05-29 Issue:7 Volume:7 Page:2100283
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Pimpolari Lorenzo¹^ORCID,Calabrese Gabriele¹,Conti Silvia¹,Worsley Robyn²,Majee Subimal²,Polyushkin Dmitry K.³,Paur Matthias³,Casiraghi Cinzia²,Mueller Thomas³,Iannaccone Giuseppe¹,Macucci Massimo¹,Fiori Gianluca¹

Affiliation:

1. Dipartimento di Ingegneria dell'Informazione Università di Pisa Via Girolamo Caruso 16 Pisa 56122 Italy

2. Department of Chemistry University of Manchester Manchester M139PL UK

3. Institute of Photonics Vienna University of Technology Vienna 1040 Austria

Funder

Horizon 2020 Framework Programme

European Research Council

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100283

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