Thickness and Morphology Dependent Electrical Properties of ALD‐Synthesized MoS 2 FETs

Author:

Mahlouji Reyhaneh1,Verheijen Marcel A.12,Zhang Yue3,Hofmann Jan P.34,Kessels Wilhelmus. M. M.(Erwin)1,Bol Ageeth A.1ORCID

Affiliation:

1. Department of Applied Physics Eindhoven University of Technology P.O. Box 513 Eindhoven MB 5600 The Netherlands

2. Eurofins Materials Science High Tech Campus 11 Eindhoven AE 5656 The Netherlands

3. Laboratory of Inorganic Materials and Catalysis Department of Chemical Engineering and Chemistry Eindhoven University of Technology P.O. Box 513 Eindhoven MB 5600 The Netherlands

4. Surface Science Laboratory Department of Materials and Earth Sciences Technical University of Darmstadt Otto‐Berndt‐Strasse 3 64287 Darmstadt Germany

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference76 articles.

1. Van der Waals heterostructures

2. 2D transition metal dichalcogenides

3. C. D.English K. K. H.Smithe R. L.Xu E.Pop inTech. Dig. – Int. Electron Devices Meet. IEDM IEEE Piscataway NJ2017 pp. 5.6.1–5.6.4.

4. Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map

5. Graphene and two-dimensional materials for silicon technology

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