Optoelectronic Modulation of Interfacial Defects in Lead‐Free Perovskite Films for Resistive Switching-Reference-Cited by-同舟云学术

Optoelectronic Modulation of Interfacial Defects in Lead‐Free Perovskite Films for Resistive Switching

Published:2021-12-28 Issue: Volume: Page:2101094
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Li Jiacheng¹,Zhang Yu¹,Yao Chuangye¹,Qin Ni¹,Chen Ruqi²,Bao Dinghua¹^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies School of Materials Science and Engineering Sun Yat‐Sen University Guangzhou 510275 China

2. Department of Industrial and Manufacturing Systems Engineering Kansas State University Manhattan KS 66506 United States

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101094

Reference77 articles.

1. In-memory computing with resistive switching devices

2. Memristive devices for computing

3. High‐Speed and Low‐Energy Nitride Memristors

4. Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

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