Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications-Reference-Cited by-同舟云学术

Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications

Published:2021-12-30 Issue: Volume: Page:2100961
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Aziz Jamal¹²,Kim Honggyun¹²,Rehman Shania¹,Khan Muhammad Farooq¹,Kadam Kalyani D.¹²,Patil Harshada¹²,Aftab Sikandar³,Dastgeer Ghulam⁴,Kim Deok‐kee¹²^ORCID

Affiliation:

1. Department of Electrical Engineering Sejong University 209 Neungdong‐ro, Gwangjin‐gu Seoul 05006 South Korea

2. Department of Convergence Engineering for Intelligent Drone Sejong University Seoul 05006 South Korea

3. Department of Engineering Simon Fraser University Burnaby Canada

4. Department of Physics & Astronomy and Graphene Research Institute‐Texas Photonics Center International Research Center (GRI‐TPC IRC) Sejong University Seoul 05006 South Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100961

Reference50 articles.

1. A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

2. Transparent and Flexible Graphene Charge-Trap Memory

3. Highly efficient flexible inverted organic solar cells using atomic layer deposited ZnO as electron selective layer