Large Tunnel Electroresistance with Ultrathin Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Barriers-Reference-Cited by-同舟云学术

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Large Tunnel Electroresistance with Ultrathin Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Barriers

Published:2021-05-13 Issue:6 Volume:7 Page:2001074
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Prasad Bhagwati¹^ORCID,Thakare Vishal²,Kalitsov Alan¹,Zhang Zimeng²,Terris Bruce¹,Ramesh Ramamoorthy²³

Affiliation:

1. Western Digital Research Center Western Digital Corporation San Jose CA 95119 USA

2. Department of Materials Science and Engineering University of California Berkeley CA 94720 USA

3. Department of Physics University of California Berkeley CA 94720 USA

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202001074

Reference34 articles.

1. Beyond CMOS computing with spin and polarization

2. Memory leads the way to better computing

3. Ultralow Voltage Manipulation of Ferromagnetism

4. Scalable energy-efficient magnetoelectric spin–orbit logic

5. Ferroelectric materials for neuromorphic computing

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1. Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches;ACS Applied Electronic Materials;2024-08-16

2. Ferroelectric-controlled magnetoelectric effect at the CrI3/HfO2 interface;Physical Review B;2024-08-05

3. Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf_0.5Zr_0.5O₂ Fatigue;Advanced Electronic Materials;2024-06-28

4. Ferroelectric freestanding hafnia membranes with metastable rhombohedral structure down to 1-nm-thick;Nature Communications;2024-06-25

5. Photovoltaic-driven dual optical writing and non-destructive voltage-less reading of polarization in ferroelectric Hf0.5Zr0.5O2 for energy efficient memory devices;Nano Energy;2024-05

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