In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices-Reference-Cited by-同舟云学术

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

Published:2020-05-07 Issue:6 Volume:6 Page:2000209
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Maikap Siddheswar¹²,Banerjee Writam³^ORCID

Affiliation:

1. Thin Film Nano Tech. Lab.Department of Electronic EngineeringChang Gung University (CGU) Taoyuan 33302 Taiwan

2. Department of Obstetrics and GynecologyKeelung Chang Gung Memorial Hospital (CGMH) No. 222, Maijin Rd., Anle Keelung 204 Taiwan

3. Center for Single Atom‐based Semiconductor DeviceDepartment of Material Science and EngineeringPohang University of Science and Technology (POSTECH) Pohang 790‐784 Republic of Korea

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000209

Reference35 articles.

1. The future of electronics based on memristive systems

2. RRAM-based synapse devices for neuromorphic systems

3. Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

4. Engineering of defects in resistive random access memory devices

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