Hydrogen Atom Doping—A Versatile Method for Modulated Interface Resistive Switching

Author:

Vanka Srinivas12ORCID,Shin Hyungki12ORCID,Davidson Bruce A.12,Liu Chong12,Zou Ke12

Affiliation:

1. Department of Physics and Astronomy University of British Columbia 6224 Agriculture Rd Vancouver British Columbia V6T 1Z1 Canada

2. Quantum Matter Institute University of British Columbia 2355 East Mall Vancouver British Columbia V6T 1Z4 Canada

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Compact SPICE Model for Current Transients within the Subthreshold Regime of Memristors;2023 IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence and Neural Engineering (MetroXRAINE);2023-10-25

2. Proof of crystal-field-perturbation-enhanced luminescence of lanthanide-doped nanocrystals through interstitial H+ doping;Nature Communications;2023-09-21

3. Nanosecond Memristor Based on Oxygen Vacancy Engineering in SrTiO3 Single Crystal;ChemNanoMat;2023-04-03

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