Nanosecond Memristor Based on Oxygen Vacancy Engineering in SrTiO3 Single Crystal

Abstract

AbstractMemristors are of great significance for the construction of memory devices and neuromorphological computing, which need a fast response time for ultrahigh data storage, ultrafast information processing, and efficient neuromorphic computing. Currently, memristors based on perovskite oxide materials generally have a long response time. In this paper, the electroforming‐free memristive behavior based on Ar+ irradiating induced oxygen vacancy modulation in SrTiO3 (STO) has been investigated. The Ag/STO/(Ta/Pt) device shows a stable bipolar resistive switching (RS) characteristic and can realize ultrafast multi‐resistance switching behavior. More importantly, its conductance can be continuously controlled with short pulse on the nanosecond scale to simulate potentiation and depression of synapse, promising potential application in ultra‐fast biological synapse and high‐efficiency training of neural networks. More importantly, the defect engineering strategy used in this work provides more freedom for the design and optimization of versatile memristor devices.