The Interplay Between Ferroelectricity and Electrochemical Reactivity on the Surface of Binary Ferroelectric AlxB1‐xN

Author:

Liu Yongtao1ORCID,Ievlev Anton1,Casamento Joseph2,Hayden John2,Trolier‐McKinstry Susan2,Maria Jon‐Paul2,Kalinin Sergei V.3,Kelley Kyle P.1

Affiliation:

1. Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37830 USA

2. Materials Research Institute Pennsylvania State University University Park PA 16802 USA

3. Department of Materials Science and Engineering University of Tennessee Knoxville TN 37996 USA

Abstract

AbstractPolarization dynamics and domain structure evolution in ferroelectric Al0.93B0.07N are studied using piezoresponse force microscopy and spectroscopies in ambient and controlled atmosphere environments. The application of negative unipolar and bipolar first‐order reverse curve (FORC) waveforms leads to a protrusion‐like feature on the Al0.93B0.07N surface and a reduction of electromechanical response due to electrochemical reactivity. A surface change is also observed on the application of fast alternating current bias. At the same time, the application of positive biases does not lead to surface changes. Comparatively in a controlled glove box atmosphere, stable polarization patterns can be observed, with minuscule changes in surface morphology. This surface morphology change is not isolated to applying biases to free surface, a similar topographical change is also observed at the electrode edges when cycling a capacitor in an ambient environment. The study suggests that surface electrochemical reactivity may have a significant impact on the functionality of this material in the ambient environment. However, even in the controlled atmosphere, the participation of the surface ions in polarization switching phenomena and ionic compensation is possible.

Funder

U.S. Department of Energy

Office of Science

Basic Energy Sciences

Energy Frontier Research Centers

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference48 articles.

1. Thin-film ferroelectric materials and their applications

2. Ferroelectric Random Access Memories

3. The Past, the Present, and the Future of Ferroelectric Memories

4. D. A.Buck Ferroelectrics for Digital Information Storage and Switching. (MASSACHUSETTS INST OF TECH CAMBRIDGE DIGITAL COMPUTER LAB) 1952.

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3