Diffusion and defect annealing in silicon doped by phosphorus ion implantation-Reference-Cited by-同舟云学术

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Diffusion and defect annealing in silicon doped by phosphorus ion implantation

Published:1970-06-16 Issue:2 Volume:2 Page:203-209
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Titov V. V.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. , and , Proc. Conf. Application of Ion Beams to Semicond. Technology, Grenoble 1967 (p. 649).

2. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

3. , , and , Proc. Conf. Application of Ion Beams to Semicond. Technology, Grenoble 1967 (p. 503).

4. and , Vliyanie termicheskoi obrabotki na elektricheskie svoistva monokristallov kremniya, Moscow 1961.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Concentration Profiles of Diffused Dopants in Silicon;Impurity Doping Processes in Silicon;1981

2. Investigations on the diffusion of implanted zinc in GaAs1–xPx by ion microprobe;Physica Status Solidi (a);1978-09-16

3. Ion Implantation — problems and perspectives;Physica Status Solidi (a);1978-07-16

4. Some features of laser annealing of implanted silicon layers;Radiation Effects;1978-01

5. The diffusion of ion-implanted zinc in GaAs1—xPx;Physica Status Solidi (a);1977-08-16

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