Diffusion of cesium in silicon during SIMS experiments investigated by numerical simulations-Reference-Cited by-同舟云学术

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Diffusion of cesium in silicon during SIMS experiments investigated by numerical simulations

Published:2014-06-13 Issue:S1 Volume:46 Page:7-10
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Philipp Patrick¹,Barry Peter¹,Wirtz Tom¹

Affiliation:

1. Department of Science and Analysis of Materials (SAM); CRP - Gabriel Lippmann; L-4422 Belvaux Luxembourg

Funder

Fonds National de la Reserche Luxembourg

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference25 articles.

1. Evaluation of a cesium positive ion source for secondary ion mass spectrometry

2. Evaluation of a cesium primary ion source on an ion microprobe mass spectrometer

3. Optimization of SIMS analyses performed in the MCsx+ mode by using an in situ deposition of neutral Cs

4. Caesium flooding on metal surfaces and sputtered negative ion yields

5. M. Bernheim J. Rebière G. Slodzian Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) 1979 40

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1. Features of semiconductor irradiation with low-energy caesium ions;Vacuum;2021-12

2. Temperature dependent Cs retention, distribution, and ion yield changes during Cs+ bombardment SIMS;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-05

3. High-resolution high-sensitivity elemental imaging by secondary ion mass spectrometry: from traditional 2D and 3D imaging to correlative microscopy;Nanotechnology;2015-10-05

4. Significant Enhancement of Negative Secondary Ion Yields by Cluster Ion Bombardment Combined with Cesium Flooding;Analytical Chemistry;2015-09-25

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