51‐3: Copper Thin Film Dry Etching Equipment via ECR Plasma Source-Reference-Cited by-同舟云学术

51‐3: Copper Thin Film Dry Etching Equipment via ECR Plasma Source

Published:2023-06 Issue:1 Volume:54 Page:734-737
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Jang Jin Nyoung¹,Lee Jong Hwa¹,Jung Jae Hoon¹,Jung Kiro¹,Lee Sangheon²,Kim Donghoon²,Hong Mun‐Pyo²,Kim Sang‐Gab³,Jang Soo Ouk⁴,Kim Chiwoo⁵

Affiliation:

1. APS Research Corporation Hwasung Korea

2. Korea University Sejong Korea

3. Samsung Display Yongin Korea

4. Korea institute of Fusion Energy Gunsan Korea

5. APS Holdings Corporation Hwasung Korea

Abstract

This paper presents Gen. 2 (370 mm * 470 mm) size thin copper film dry etching performance that is etched by high electron temperature plasma source with low temperature substrate. Dry etching is performed using HCl gas in a reactive ion etching mode. In addition, scanning low temperature susceptor and the electron cyclotron resonance (ECR) plasma produced by rectangular‐type microwave slot antenna (ReSLAN) are used.

Publisher

Wiley

Subject

General Medicine

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