64‐4: ECR Plasma Source for Copper Thin Film Dry Etching

Abstract

Dry etching process of thin copper films using high electron temperature ECR (electron cyclotron resonance) plasma source is developed. With ECR source and RIE (reactive ion etching) mode, etching rate of 175 nm/min is achieved. Dry etching is performed under high electron temperature plasma source with low temperature substrate and employing a reactive ion etching mode. To compensate the large area etching uniformity, scanning low temperature susceptor is adopted. Rectangular‐type microwave slot antenna (ReSLAN) is used to generate ECR plasma.