Affiliation:
1. Department of Electrical and Computer Engineering Inter-university Semiconductor Research Center, Seoul National University Seoul Republic of Korea 08826
Abstract
In this paper, indium‐gallium‐zinc‐oxide synaptic transistors with different channel lengths ranging from 2 μm to 1 μm were demonstrated. Channel scaling effect on synaptic behaviors such as long‐term depression and long‐term potentiation was investigated. A spiking neural network simulation was conducted to verify our synaptic transistor with a channel length of 1 μm, achieving high classification accuracy of 98.05%.
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