Affiliation:
1. School of Electronic and Computer Engineering Peking University Shenzhen Graduate School Shenzhen China
2. Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Hong Kong China
Abstract
We demonstrated self‐aligned top‐gate (SATG) amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐film transistor (TFT) where the source/drain (S/D) regions were induced into a low resistance state by first coating a thin hafnium (Hf) film and then performing thermal annealing in oxygen. The experimental results show that the sheet resistance of the Hf‐treated a‐IGZO layer can be as low as 408 Ω/□. The a‐IGZO TFT fabricated in the proposed processes shows excellent electrical performances, such as a field effect mobility of 16.6 cm 2 /V·s, a subthreshold swing of 0.20 V/dec, an on/off current ratio over 10 9, and high stability against electrical stress.