Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt-Reference-Cited by-同舟云学术

Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt

Published:2019-03-26 Issue:10 Volume:7 Page:1801763
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Wang Yixin¹,Rong Xin¹,Ivanov Sergey²,Jmerik Valentin²,Chen Zhaoying¹,Wang Hui¹,Wang Tao¹,Wang Ping¹,Jin Peng³,Chen Yanan³,Kozlovsky Vladimir⁴,Sviridov Dmitry⁴,Zverev Michail⁵,Zhdanova Elena⁵,Gamov Nikita⁵,Studenov Valentin⁵,Miyake Hideto⁶,Li Hongwei⁷,Guo Shiping⁷,Yang Xuelin¹,Xu Fujun¹,Yu Tongjun¹,Qin Zhixin¹,Ge Weikun¹,Shen Bo¹⁸,Wang Xinqiang¹⁸^ORCID

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 P. R. China

2. Ioffe Institute Polytekhnicheskaya Str. 26 St. Petersburg 194021 Russia

3. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low‐dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China

4. P. N. Lebedev Physical Institute Leninsky Ave. 53 Moscow 119991 Russia

5. MIREA Moscow Technological University Vernadsky Ave. 78 Moscow 119454 Russia

6. Department of Electrical and Electronic Engineering Mie University Mie 514‐8507 Japan

7. Advanced Micro‐Fabrication Equipment Inc. Shanghai 201201 P. R. China

8. Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China

Funder

NSAF Joint Fund

National Natural Science Foundation of China

Russian Foundation for Basic Research

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher