Integration of MoS 2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands-Reference-Cited by-同舟云学术

Integration of MoS 2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Published:2019-09-10 Issue:23 Volume:7 Page:1901039
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Adv. Optical Mater.

Author:

Deng Jianan¹,Zong Lingyi²,Bao Wenzhong²^ORCID,Zhu Mingsai¹,Liao Fuyou²,Guo Zhongxun²,Xie Yuying¹,Lu Bingrui¹,Wan Jing¹,Zhu Jiahe³,Peng Ruwen⁴,Chen Yifang¹

Affiliation:

1. State Key Laboratory of ASIC and SystemSchool of Information Science and TechnologyFudan University Shanghai 200433 China

2. State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan University Shanghai 200433 China

3. School of Electronic Science and EngineeringNanjing University Nanjing 210093 China

4. National Laboratory of Solid State MicrostructuresSchool of Physics and Collaborative Innovation Center of Advanced MicrostructuresNanjing University Nanjing 210093 China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.201901039

Reference36 articles.

1. Hybrid UV Active Pixel Sensor Implemented Using GaN MSM UV Sensor and Si-Based Circuit

2. Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands