Structural Engineering of Nano-Grain Boundaries for Low-Voltage UV-Photodetectors with Gigantic Photo- to Dark-Current Ratios-Reference-Cited by-同舟云学术

Structural Engineering of Nano-Grain Boundaries for Low-Voltage UV-Photodetectors with Gigantic Photo- to Dark-Current Ratios

Published:2016-07-29 Issue:11 Volume:4 Page:1787-1795
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Nasiri Noushin¹,Bo Renheng¹,Chen Hongjun¹,White Thomas P.²,Fu Lan³,Tricoli Antonio¹

Affiliation:

1. Nanotechnology Research Laboratory; Research School of Engineering; College of Engineering and Computer Sciences; Australian National University; Canberra 2601 Australia

2. Centre for Sustainable Energy Systems; Research School of Engineering; College of Engineering and Computer Sciences; Australian National University; Canberra 2601 Australia

3. Department of Electronic Materials Engineering; College of Physical and Mathematical Sciences; Australian National University; Canberra 2601 Australia

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adom.201600273/fullpdf

Reference44 articles.

1. An Optimized Ultraviolet-A Light Photodetector with Wide-Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt

2. All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity

3. Ultraviolet photodetectors fabricated from ZnO p–i–n homojunction structures

4. Enhancing Sensitivity of a Single ZnO Micro-/Nanowire Photodetector by Piezo-phototronic Effect

5. Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

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