An ARXPS study of the passivating layer formed on III-V surface by an innovative anodic treatment in liquid ammonia-Reference-Cited by-同舟云学术

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An ARXPS study of the passivating layer formed on III-V surface by an innovative anodic treatment in liquid ammonia

Published:2010-05-06 Issue:6-7 Volume:42 Page:775-778
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Gonçalves A.-M.,Bouttemy M.,El Ali O.,Eb A.,Mathieu C.,Vigneron J.,Etcheberry A.,White R.,Mack P.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.3547/fullpdf

Reference11 articles.

1. First evidence of stable P–N bonds after anodic treatment of InP in liquid ammonia: A new III–V material passivation route

2. Enhancement mode InP MISFET's with sulfide passivation and photo-CVD grown P3N5 gate insulators

3. Surface passivation of (100) InP by organic thiols and polyimide as characterized by steady-state photoluminescence

4. Passivation of InP surfaces of electronic devices by organothiolated self-assembled monolayers

5. Characterization of n-InP surfaces before and after surface modification

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2. DFT and experimental FTIR investigations of early stages of (0 0 1) and (1 1 1)B GaAs surface nitridation;Applied Surface Science;2019-01

3. XPS study during a soft and progressive sputtering of a monolayer on indium phosphide by argon cluster bombardment;Surface and Interface Analysis;2018-03-22

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