Functionalization of Low‐k Polyimide Gate Dielectrics with Self‐Assembly Monolayer Toward High‐Performance Organic Field‐Effect Transistors and Circuits-Reference-Cited by-同舟云学术

Functionalization of Low‐k Polyimide Gate Dielectrics with Self‐Assembly Monolayer Toward High‐Performance Organic Field‐Effect Transistors and Circuits

Published:2021-04-02 Issue:11 Volume:8 Page:2100217
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Zheng Yingshuang¹,Yu Li¹,Wang Zhongwu¹,Chen Xiaosong¹,Li Jie¹,Zou Ye²,Ji Deyang¹^ORCID,Li Liqiang¹,Hu Wenping³⁴

Affiliation:

1. Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin 300072 China

2. Beijing National Laboratory for Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China

3. Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 China

4. Joint School of National University of Singapore and Tianjin University Fuzhou 350207 China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202100217

Reference35 articles.