Effect of Plasma Treatment on Metal Oxide p–n Thin Film Diodes Fabricated at Room Temperature
Author:
Affiliation:
1. Electrical Engineering Division University of Cambridge 9 J J Thomson Avenue Cambridge CB3 0FA UK
2. College of Engineering Boston University 44 Cummington Mall Boston MA 02215 USA
Funder
Engineering and Physical Sciences Research Council
Cambridge Trust
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202100049
Reference50 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain
3. Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers
4. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
5. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
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1. Doping Density Extraction of Plasma Treated Metal Oxide Thin Film Diodes by Capacitance–Voltage Analysis;Advanced Materials Interfaces;2023-05-11
2. The NiO/CuInS 2 Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS 2 QDs;Advanced Materials Interfaces;2022-10-20
3. Self-powered UV photodetectors and imaging arrays based on NiO/IGZO heterojunctions fabricated at room temperature;Optics Express;2022-07-13
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