Structural Defects Improve the Memristive Characteristics of Epitaxial La 0.8 Sr 0.2 MnO 3 ‐Based Devices-Reference-Cited by-同舟云学术

Structural Defects Improve the Memristive Characteristics of Epitaxial La _0.8 Sr _0.2 MnO ₃ ‐Based Devices

Published:2022-07-11 Issue:23 Volume:9 Page:2200498
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Moncasi Carlos¹^ORCID,Lefèvre Gauthier²,Villeger Quentin¹,Rapenne Laetitia¹^ORCID,Roussel Hervé¹,Bsiesy Ahmad²,Jiménez Carmen¹^ORCID,Burriel Mónica¹^ORCID

Affiliation:

1. Univ. Grenoble Alpes CNRS Grenoble INP LMGP Grenoble 38000 France

2. Univ. Grenoble Alpes CNRS CEA/LETI Minatec LTM Grenoble 38 000 France

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202200498

Reference54 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

3. Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

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