Enhanced Hole Extraction of WO <sub>x</sub> /V <sub>2</sub> O <sub>x</sub> Dopant‐Free Contact for p‐type Silicon Solar Cell-Reference-Cited by-同舟云学术

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Enhanced Hole Extraction of WO _x /V ₂ O _x Dopant‐Free Contact for p‐type Silicon Solar Cell

Published:2022-02-20 Issue:10 Volume:9 Page:2102374
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Liu Zongtao¹²^ORCID,Lin Wenjie³,Chen Zhiming⁴,Chen Daming²,Chen Yifeng²,Shen Hui¹,Liang Zongcun¹^ORCID

Affiliation:

1. Institute for Solar Energy Systems School of Physics Sun Yat‐Sen University Guangzhou 510006 China

2. State Key Laboratory of PV Science and Technology Trina Solar Changzhou 213031 China

3. Global Photovoltaic Joint Innovation Center Aikosolar Yiwu 322009 China

4. Foshan Raynova Materials Technology Co., LTD Foshan 528000 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202102374

Reference73 articles.

1. 20% efficiency silicon solar cells

2. 22.8% efficient silicon solar cell

3. Surface passivation of crystalline silicon solar cells: a review

4. b)D.Inns D.Poplavskyy presented at2015 IEEE 42nd Photovoltaic Specialist Conf (PVSC) New Orleans June2015.

5. A 15% efficient silicon MIS solar cell

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4. Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices;Advanced Composites and Hybrid Materials;2023-07-28

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