Solution-processed copper(<scp>i</scp>) iodide <i>via</i> co-doping for enhanced hole selective contacts in p-type crystalline silicon solar cells-Reference-Cited by-同舟云学术

Solution-processed copper(i) iodide via co-doping for enhanced hole selective contacts in p-type crystalline silicon solar cells

Published:2024 Issue:4 Volume:12 Page:1386-1395
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Fu Wang¹,Liu Wuqi¹,Wei Yaju¹,Liu Dan¹,Li Songyu¹,Zhao Di¹,Wu Xiaoping¹,Xu Lingbo¹^ORCID,Lin Ping¹,Cui Can¹,Yu Xuegong²^ORCID,Wang Peng¹^ORCID

Affiliation:

1. Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

2. State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Material Science and Engineering, Zhejiang University, Hangzhou 310027, China

Abstract

We have demonstrated that solution-processed CuI films via Al3+ and I2 co-doping act as effective full-area hole-selective contact layers, generating a remarkable power conversion efficiency of 18.28% for Al3+–I2:CuI/p-Si heterojunction solar cells.

Funder

Natural Science Foundation of Zhejiang Province

National Natural Science Foundation of China

Zhejiang Sci-Tech University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC02988C

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