Passivation of Bi <sub>2</sub> Te <sub>3</sub> Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces-Reference-Cited by-同舟云学术

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Passivation of Bi ₂ Te ₃ Topological Insulator by Transferred CVD‐Graphene: Toward Intermixing‐Free Interfaces

Published:2022-12 Issue:36 Volume:9 Page:2201997
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Galceran Regina¹,Bonell Frédéric¹²,Camosi Lorenzo¹,Sauthier Guillaume¹,Gebeyehu Zewdu M.¹³,Esplandiu Maria José¹,Arrighi Aloïs¹³,Fernández Aguirre Iván¹³,Figueroa Adriana I.¹,Sierra Juan F.¹,Valenzuela Sergio O.¹⁴^ORCID

Affiliation:

1. Catalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and The Barcelona Institute of Science and Technology (BIST) Campus UAB, Bellaterra Barcelona 08193 Spain

2. Univ. Grenoble Alpes, CNRS, CEA Spintec Grenoble 38000 France

3. Universitat Autònoma de Barcelona Bellaterra Barcelona 08193 Spain

4. Institució Catalana de Recerca i Estudis Avançats (ICREA) Barcelona 08010 Spain

Funder

Ministerio de Ciencia e Innovación

European Commission

Ministerio de Economía y Competitividad

H2020 Excellent Science

Horizon 2020 Framework Programme

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202201997

Reference55 articles.

1. Spintronics: Fundamentals and applications

2. Opportunities and challenges for spintronics in the microelectronics industry

3. Van der Waals heterostructures for spintronics and opto-spintronics

4. Switching by topological insulators

5. Interfacial spin–orbit torques

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis Methods and Property Control of Two-Dimensional Magnetic Materials;Chinese Physics Letters;2024-02-01

2. Insights into the Stability and Surface Termination of Topological Semimetal NbAs₂;Advanced Materials Interfaces;2024-01-12

3. Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb₂Te₃/Bi₂Te₃ Topological Insulator Heterostructure for Spin-Charge Conversion;ACS Applied Materials & Interfaces;2023-10-20

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