Interface Defect Engineering of a Large‐Scale CVD‐Grown MoS 2 Monolayer via Residual Sodium at the SiO 2 /Si Substrate-Reference-Cited by-同舟云学术

Interface Defect Engineering of a Large‐Scale CVD‐Grown MoS 2 Monolayer via Residual Sodium at the SiO 2 /Si Substrate

Published:2021-06-25 Issue:14 Volume:8 Page:2100428
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Han Sang Wook¹^ORCID,Yun Won Seok²^ORCID,Woo Whang Je³,Kim Hyungjun³,Park Jusang³,Hwang Young Hun⁴,Nguyen Tri Khoa¹,Le Chinh Tam¹,Kim Yong Soo¹,Kang Manil⁵,Ahn Chang Won¹,Hong Soon Cheol¹

Affiliation:

1. Department of Physics Basic Science Research Institute and Energy Harvest Storage Research Center University of Ulsan Ulsan 44610 Republic of Korea

2. Convergence Research Institute DGIST Daegu 42988 Republic of Korea

3. School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea

4. Electricity & Electronics and Semiconductor Applications Ulsan College Ulsan 44610 Republic of Korea

5. Department of Physics Kongju National University Kongju 32588 Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Education

Daegu Gyeongbuk Institute of Science and Technology

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202100428

Reference70 articles.

1. Emerging Photoluminescence in Monolayer MoS2

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Single-layer MoS2 transistors

4. MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

5. Ultrasensitive photodetectors based on monolayer MoS2

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