Improved characteristics of MoS2 transistors with selective doping using 1,2-dichloroethane

Author:

Jeong WonchaeORCID,Kim Taeyoung,Kim Yoonsok,Jeong Mun SeokORCID,Kim Eun KyuORCID

Abstract

Abstract We demonstrate area-selective doping of MoS2 field-effect transistors using 1,2-dichloroethane (DCE) solution. In the device manufacturing process, area-selective chemical doping was used to implement contact engineering in the source/drain region. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy measurements were performed to confirm the blocked layer (BL) using a photoresist, which suppressed the doping effect of the DCE treatment. In the XPS results, the main core level of the MoS2 flake with BL did not shift, whereas that of the MoS2 flake without BL changed by approximately 0.24 eV. In the case of the MoS2 flakes with a BL, the vibrational modes of the Raman scattering did not shift. Conversely, the two Raman peaks of the MoS2 flake without BL red-shifted because of increasing electron–phonon scattering. The effect of area-selective doping was confirmed by electrical measurements. The field-effect mobility and the subthreshold swing were enhanced from 4.07 to 31.5 cm2 (V s)−1 and from 1.26 to 0.401 V/decade, respectively.

Funder

National Research Foundation of Korea

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3