An Iminostilbene Functionalized Benzimidazoline for Enhanced n‐Type Solution Doping of Semiconducting Polymers for Organic Thermoelectrics

Author:

Rossi Pietro12,Pallini Francesca3,Coco Giulia12,Mattiello Sara3,Tan Wen Liang4,Mezzomo Lorenzo3,Cassinelli Marco1,Lanzani Guglielmo12,McNeill Christopher R.4,Beverina Luca3,Caironi Mario1ORCID

Affiliation:

1. Center for Nano Science and Technology@PoliMi Istituto Italiano di Tecnologia via Giovanni Pascoli 70 Milan 20134 Italy

2. Physics Department Politecnico di Milano Piazza Leonardo da Vinci 32 Milan 20133 Italy

3. Department of Materials Science Università di Milano‐Bicocca via Cozzi 55 Milan 20125 Italy

4. Department of Materials Science and Engineering Monash University Clayton VIC 3800 Australia

Abstract

AbstractDoped organic semiconductors play a central role in the development of several innovative optoelectronic and energy harvesting applications. Currently, the realization of thermoelectric generators, which require both hole‐ and electron‐transporting materials with high electrical conductivity, is strongly hindered by the scarce availability of stable solution‐processable n‐dopants and their limited efficiency. Herein, the synthesis of 4‐(1,3‐dimethyl‐2,3‐dihydro‐1H‐benzimidazol‐2‐yl)‐dibenzazepine (IStBI), a novel derivative belonging to the well‐known family of the benzimidazoline compounds, is presented. The functionalization with the planarized and rigid iminostilbene substituent allows, without significantly affecting the compound electronic structure, an efficient intercalation of the dopant molecules inside the ordered regions of thin films of the benchmark n‐type polymer poly(N,N′‐bis‐2‐octyldodecylnaphthalene‐1,4,5,8‐bis‐dicarboximide‐2,6‐diyl‐alt‐5,5′‐2,2′‐bithiophene) P(NDI2OD‐T2). Consequently, a maximum electrical conductivity of (1.14 ± 0.13) × 10−2 S cm−1 is recorded, exceeding by one order of magnitude what previously achieved upon solution doping of the reference P(NDI2OD‐T2) with benzimidazoline derivatives. The thermoelectric power factor is also simultaneously increased. The findings confirm that tailoring of the dopant chemical structure to improve structural interactions with the host semiconductors can be employed as a successful strategy to achieve more effective n‐doping, helping to close the performance gap with p‐type materials.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

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