Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS 2 on Ion Implantation Doped 4H‐SiC-Reference-Cited by-同舟云学术

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS ₂ on Ion Implantation Doped 4H‐SiC

Published:2022-10-04 Issue:1 Volume:10 Page:2201502
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Giannazzo Filippo¹^ORCID,Panasci Salvatore Ethan¹²,Schilirò Emanuela¹,Fiorenza Patrick¹,Greco Giuseppe¹,Roccaforte Fabrizio¹,Cannas Marco³,Agnello Simonpietro¹³⁴,Koos Antal⁵,Pécz Béla⁵,Španková Marianna⁶,Chromik Štefan⁶

Affiliation:

1. CNR‐IMM Strada VIII Catania 5 95121 Italy

2. Department of Physics and Astronomy University of Catania Via Santa Sofia 64 Catania 95123 Italy

3. Department of Physics and Chemistry Emilio Segré University of Palermo Via Archirafi 36 Palermo 90143 Italy

4. AtenCenter University of Palermo Viale delle Scienze Ed.18 Palermo 90128 Italy

5. Centre for Energy Research Institute of Technical Physics and Materials Science Konkoly‐Thege ut 29–33 Budapest 1121 Hungary

6. Institute of Electrical Engineering SAS Dúbravská cesta 9 Bratislava 84104 Slovakia

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202201502

Reference47 articles.

1. 2D transition metal dichalcogenides

2. 2D materials and van der Waals heterostructures

3. Vertical Transistors Based on 2D Materials: Status and Prospects

4. Mixed-dimensional van der Waals heterostructures

5. Van der Waals Heterostructures by Design: From 1D and 2D to 3D

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