Electronic Characteristics of Ultra‐Thin Passivation Layers for Silicon Photovoltaics-Reference-Cited by-同舟云学术

Electronic Characteristics of Ultra‐Thin Passivation Layers for Silicon Photovoltaics

Published:2022-09-04 Issue:28 Volume:9 Page:2201339
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Pain Sophie L.¹,Khorani Edris¹,Niewelt Tim¹²³,Wratten Ailish¹,Paez Fajardo Galo J.⁴,Winfield Ben P.¹,Bonilla Ruy S.⁵,Walker Marc⁶,Piper Louis F. J.⁴,Grant Nicholas E.¹,Murphy John D.¹^ORCID

Affiliation:

1. School of Engineering University of Warwick Coventry CV4 7AL UK

2. Fraunhofer Institute for Solar Energy Systems ISE Heidenhofstraße 2 79110 Freiburg Germany

3. Institute for Sustainable Systems Engineering University of Freiburg Emmy‐Noether‐Straße 2 79110 Freiburg Germany

4. Warwick Manufacturing Group University of Warwick Coventry CV4 7AL UK

5. Department of Materials University of Oxford Parks Road Oxford OX1 3PH UK

6. Department of Physics University of Warwick Coventry CV4 7AL UK

Funder

Leverhulme Trust

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202201339

Reference62 articles.

1. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

2. Passivating contacts for crystalline silicon solar cells

3. Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

4. Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells

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