Affiliation:
1. Department of Mechanical Engineering Kobe University 1‐1 Rokkodai‐cho, Nada‐ku Kobe 657–8501 Japan
2. Department of Materials Science and Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 South Korea
3. Division of Physics Faculty of Liberal Arts Sciences and Global Education Osaka Metropolitan University 1‐1 Gakuen‐cho, Naka‐ku, Osaka Sakai 599‐8531 Japan
Abstract
AbstractIn this study, Piezoelectric energy harvesters (PEHs) are fabricated based on epitaxial Pb(Zr,Ti)O3 (PZT) thin films deposited by an RF magnetron sputtering with varied Zr/[Zr+Ti] ratio. For a compatibility with micro‐electromechanical systems, the epitaxial PZT thin films are deposited on Si substrates (PZT/Si). The morphotropic phase boundary (MPB) are formed in the compositional range of 0.44 ≤ Zr/[Zr+Ti] ≤ 0.51 of the epitaxial PZT/Si, which is far broader than that of the bulk PZT. Meanwhile, effective transverse piezoelectric coefficient (|e31,f|) values are evaluated by the direct and converse piezoelectric effects using the unimorph cantilever method. Among the compositions, the rhombohedral‐dominant MPB (MPB‐R) of Zr/[Zr+Ti] = 0.51 exhibits a direct |e31,f| of 10.1 C m−2 and a relative permittivity (εr) of 285, leading to the maximum figure of merit of 40 GPa in this study. On the other hand, the maximum converse |e31,f| of 14.0 C m−2 is measured from the tetragonal‐dominant MPB (MPB‐T) of Zr/[Zr+Ti] = 0.44. At a resonance frequency, the MPB‐T presents a high output power density of 301.5 µW−1/(cm2 g2) under an acceleration of 3 m−1 s−2, which is very promising for the high‐performance PEH applications.
Funder
Japan Science and Technology Corporation
Subject
Mechanical Engineering,Mechanics of Materials
Cited by
3 articles.
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