All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?-Reference-Cited by-同舟云学术

All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?

Author:

Renn Lukas¹²,Walter Lisa S.¹²,Watanabe Kenji³,Taniguchi Takashi⁴,Weitz R. Thomas¹²^ORCID

Affiliation:

1. 1st Institute of Physics Faculty of Physics Georg‐August‐University Göttingen Germany

2. AG Physics of Nanosystems Faculty of Physics Ludwig‐Maximilians‐University Munich Germany

3. Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

4. International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

Funder

Solar Technologies go Hybrid

Deutsche Forschungsgemeinschaft

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

Reference39 articles.

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