Dielectric–Semiconductor Interface Limits Charge Carrier Motion at Elevated Temperatures and Large Carrier Densities in a High‐Mobility Organic Semiconductor-Reference-Cited by-同舟云学术

Dielectric–Semiconductor Interface Limits Charge Carrier Motion at Elevated Temperatures and Large Carrier Densities in a High‐Mobility Organic Semiconductor

Published:2019-02-04 Issue:12 Volume:29 Page:1807867
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Vladimirov Ilja¹²,Müller Sebastian¹,Baumann Roelf‐Peter¹,Geßner Thomas¹,Molla Zahra³,Grigorian Souren³,Köhler Anna⁴⁵,Bässler Heinz⁴,Pietsch Ullrich³,Weitz Ralf Thomas¹²⁶⁷^ORCID

Affiliation:

1. BASF SE Carl‐Bosch‐Straße 38 67056 Ludwigshafen Germany

2. InnovationLab GmbH Speyerer Str. 4 69115 Heidelberg Germany

3. Department of PhysicsUniversity of Siegen Emmy‐Noether‐Campus, Walter‐Flex‐Str. 3 57072 Siegen Germany

4. Soft Matter OptoelectronicsUniversity of Bayreuth 95440 Bayreuth Germany

5. Bayreuth Institute of Macromolecular Science (BIMF)University of Bayreuth 95440 Bayreuth Germany

6. Physics of NanosystemsFaculty of Physics,and Center for Nanoscience (CeNS)Ludwig‐Maximilians University Amalienstr. 54 80799 Munich Germany

7. Nanosystems Initiative Munich (NIM) Schellingstr. 4 80799 Munich Germany

Funder

Bundesministerium für Bildung und Forschung

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Publisher