Surface Interactions of Oxygen Suffice to P‐Dope the Halide Perovskites
Author:
Affiliation:
1. Department of Chemistry Bar‐Ilan University Ramat Gan 5290002 Israel
2. Department of Molecular Chemistry and Materials Science Weizmann Inst. of Science Rehovot 7610001 Israel
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202200569
Reference33 articles.
1. Defects in Semiconductors: Some Fatal, Some Vital
2. Doping in III-V Semiconductors
3. The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon
4. Electrical doping in halide perovskites
5. Schottky/p-n Cascade Heterojunction Constructed by Intentional n-Type Doping Perovskite Toward Efficient Electron Layer-Free Perovskite Solar Cells
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