Towards intrinsic phonon transport in single-layer MoS2-Reference-Cited by-同舟云学术

Towards intrinsic phonon transport in single-layer MoS2

Published:2016-03-16 Issue:6 Volume:528 Page:504-511
ISSN:0003-3804
Container-title:Annalen der Physik
language:en
Short-container-title:ANNALEN DER PHYSIK

Author:

Peng Bo¹,Zhang Hao¹,Shao Hezhu²,Xu Yuanfeng¹,Zhang Xiangchao¹,Zhu Heyuan¹

Affiliation:

1. Shanghai Ultra-precision Optical Manufacturing Engineering Research Center and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education); Department of Optical Science and Engineering, Fudan University; Shanghai 200433 China

2. Ningbo Institute of Materials Technology and Engineering; Chinese Academy of Sciences; Ningbo 315201 China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Wiley

Subject

General Physics and Astronomy

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/andp.201500354/fullpdf

Reference52 articles.

1. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

2. A roadmap for graphene

3. Spintronics in MoS2monolayer quantum wires

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

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