Investigations on Field-Effect Transistors Based on Two-Dimensional Materials
Author:
Affiliation:
1. Institute of Semiconductor Electronics, RWTH Aachen University; 52074 Aachen Germany
2. Infineon Technologies; Villach Austria
3. Intelligent Microsystems Chair, TU Dortmund University; 44227 Dortmund Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
General Physics and Astronomy
Reference54 articles.
1. Electric Field Effect in Atomically Thin Carbon Films
2. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene
3. WSe2 field effect transistors with enhanced ambipolar characteristics
4. Graphene transistors
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