Electronic Transport Properties of 1D-Defects in Graphene and Other 2D-Systems
Author:
Affiliation:
1. IV. Physical Institute, Solids and Nanostructures; Georg-August-University Göttingen; Friedrich-Hund-Platz 1 37077 Göttingen Germany
2. Lehrstuhl für Festkörperphysik; Universität Erlangen-Nürnberg; 91058 Erlangen Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
General Physics and Astronomy
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/andp.201700003/fullpdf
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4. Magnetoresistance and charge transport in graphene governed by nitrogen dopants;Rein;ACS nano,2015
5. Electronic transport and localization in nitrogen-doped graphene devices using hyperthermal ion implantation;Friedman;Phys. Rev. B,2016
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