Magnetoresistance and Charge Transport in Graphene Governed by Nitrogen Dopants
Author:
Affiliation:
1. Institut für Physik, Johannes Gutenberg-Univsersity, 55128 Mainz, Germany
2. Max Planck Institute for Polymer Research, 55128 Mainz, Germany
3. Molecular Functional Materials, Dresden University of Technology, 01069 Dresden, Germany
Funder
European Research Council
Deutsche Forschungsgemeinschaft
European Commission
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/nn5057063
Reference46 articles.
1. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
2. Intrinsic and extrinsic performance limits of graphene devices on SiO2
3. Nitrogen-Doped Graphene and Its Application in Electrochemical Biosensing
4. Electronic transport in graphene: A semiclassical approach including midgap states
5. Adsorbates on graphene: Impurity states and electron scattering
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