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Half‐selection disturbance free 8T low leakage SRAM cell

Published:2022-02-02 Issue:5 Volume:50 Page:1557-1575
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Circuit Theory & Apps

Author:

Lorenzo Rohit¹^ORCID,Paily Roy²

Affiliation:

1. School of Electronics Engineering VIT‐AP University Amaravati Andhra Pradesh India

2. EEE Department IIT Guwahati Guwahati Assam India

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/cta.3232

Reference29 articles.

1. Supply Voltage Decision Methodology to Minimize SRAM Standby Power Under Radiation Environment

2. Near-Threshold Computing: Reclaiming Moore's Law Through Energy Efficient Integrated Circuits

3. Device-Optimization Technique for Robust and Low-Power FinFET SRAM Design in NanoScale Era

4. A novel 9T SRAM architecture for low leakage and high performance

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of dual port 9T SRAM cell with parallel processing and high performance computing;Physica Scripta;2024-08-20

2. Design of improved write and read performance 12T sram cell with leakage power control technique;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2024-06

3. A robust radiation resistant SRAM cell for space and military applications;Integration;2024-05

4. A low power static noise margin enhanced reliable 8 T SRAM cell;Microsystem Technologies;2024-04-20

5. An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors;Microelectronics Reliability;2024-01

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