A novel artificial neural network‐based nonlinear output current model for GaAs pHEMT with accurate high‐order derivatives
Author:
Affiliation:
1. School of MicroelectronicsTianjin University Tianjin 300072 China
2. Science and Technology on High Power Microwave LaboratoryNorthwest Institute of Nuclear Technology Xi'an 710024 China
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2736
Reference38 articles.
1. Accurate modeling of pHEMT output current derivatives over a wide temperature range
2. Stretching the Design: Extending Analytical Circuit Design from the Linear to the Nonlinear Domain
3. Progress for Behavioral Challenges: A Summary of Time-domain Behavioral Modeling of RF and Microwave Subsystems
4. An artificial neural network-based approach for the impedance modeling of piezoelectric energy harvesting devices
5. A New Training Approach for Parametric Modeling of Microwave Passive Components Using Combined Neural Networks and Transfer Functions
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1. On Temperature-Dependent Small-Signal Behavioral Modelling of GaN HEMT Using GWO-PSO and WOA;2023 International Symposium on Networks, Computers and Communications (ISNCC);2023-10-23
2. Novel neural network optimization approach for modeling scattering and noise parameters of microwave transistor;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-07-04
3. A nonlinear empirical I/V model for GaAs and GaN FETs suitable to design power amplifiers;International Journal of RF and Microwave Computer-Aided Engineering;2021-01-17
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