Feasibility of very-short-channel mos transistors with double-gate structure-Reference-Cited by-同舟云学术

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Feasibility of very-short-channel mos transistors with double-gate structure

Published:1993 Issue:10 Volume:76 Page:39-48
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Sekigawa Toshihiro,Hayashia Yutaka,Ishii Kenich

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference23 articles.

1. Design of ion-implanted MOSFET's with very small physical dimensions

2. Performance and reliability design issues for deep-submicrometer MOSFETs

3. Physical limits in digital electronics

4. MOS Avalanche and Tunneling Effects in Silicon Surfaces

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5. Metal silicide patterning: a new approach to silicon nanoelectronics;Nanotechnology;1996-09-01

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