MOS Avalanche and Tunneling Effects in Silicon Surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1709189
Reference7 articles.
1. TRANSIENT VOLTAGE BREAKDOWN DUE TO AVALANCHE IN MIS CAPACITORS
2. Physical limitations on the frequency response of a semiconductor surface inversion layer
3. Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
4. Temperature Dependence of Inversion-Layer Frequency Response in Silicon
5. Effect of junction curvature on breakdown voltage in semiconductors
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