8‐4: Oxide Semiconductor In‐Zn‐O‐X system with High Electron Mobility-Reference-Cited by-同舟云学术

8‐4: Oxide Semiconductor In‐Zn‐O‐X system with High Electron Mobility

Published:2023-06 Issue:1 Volume:54 Page:85-88
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Tokuchi Shigeki¹,Shiranita Ryo²,Teramura Kyosuke²,Furuta Mamoru³

Affiliation:

1. Limited, R%D Center Mitsui Mining & Smelting Company Saitama Japan 362-0021

2. Limited, PVD Materials Division Mitsui Mining & Smelting Company Fukuoka Japan 836-0003

3. School of Environmental Science and Engineering Kochi University of Technology Kochi Japan 782-8502

Abstract

We proposed high mobility In‐Zn‐O‐X system, in which X is added to control carrier density. Choosing favorable X additives and optimizing the composition are keys to achieve high mobility. We have demonstrated Thin‐Film Transistor with its mobility over 60 cm2/Vs, and that would be useful for high‐definition display.

Publisher

Wiley

Subject

General Medicine

Reference15 articles.

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