Plasma-enhanced MOVPE and nitrogen doping of ZnSe
Author:
Publisher
Wiley
Subject
General Chemical Engineering,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy
2. Conductivity control of ZnSe grown by MOVPE and its application for blue electroluminescence
3. inOrganometallic Vapor—phase Epitaxy: Theory and Practice, Academic, New York, 1989,
4. Reduced incorporation of unintentional impurities and intrinsic defects in ZnSe and ZnS grown by MOVPE
5. MOVPE of ZnSe using organometallic allyl selenium precursors
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1. Nitrogen as carrier gas for the growth of ZnSe and ZnSe:N in plasma enhanced metalorganic vapor phase epitaxy;Journal of Crystal Growth;1997-01
2. Optical and electrical properties of annealed ZnSe:N grown by metalloorganic vapor phase epitaxy;Journal of Applied Spectroscopy;1996-11
3. Temperature and excitation dependent photoluminescence of undoped and nitrogen-doped ZnSe epilayers;physica status solidi (b);1996-01-01
4. Oxygen and tellurium impurities in zinc selenide grown by metalorganic vapour phase epitaxy;Journal of Crystal Growth;1995-01
5. Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure metalorganic vapour phase epitaxy system;Journal of Crystal Growth;1994-12
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