Temperature and excitation dependent photoluminescence of undoped and nitrogen-doped ZnSe epilayers-Reference-Cited by-同舟云学术

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Temperature and excitation dependent photoluminescence of undoped and nitrogen-doped ZnSe epilayers

Published:1996-01-01 Issue:1 Volume:193 Page:257-267
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Gurskii A. L.,Gavrilenko A. N.,Lutsenko E. V.,Yablonskii G. P.,Taudt W.,Hamadeh H.,Wachtendorf B.,Söllner J.,Schmoranzer J.,Heuken M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Effect of operating conditions and precursors on optoelectronic properties of OMVPE grown ZnSe

2. Effect of MOVPE growth parameters on the photoluminescence linewidth of ZnSxSe1−x (0⩽x⩽1) epilayers on GaAs

3. Effects of C incorporation on the luminescence properties of ZnSe grown by metalorganic chemical vapor deposition

4. Growth and doping of ZnTe and ZnSe epilayers with metalorganic vapour phase epitaxy

5. Plasma-enhanced MOVPE and nitrogen doping of ZnSe

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1. II–VI nanowire radial heterostructures;Nanotechnology;2013-10-18

2. The role of impurity bands and electron–phonon interaction in formation of near-band-edge PL spectra of compensated ZnSe;Journal of Crystal Growth;2000-06

3. Free-exciton spectra in heteroepitaxial ZnSe/GaAs layers;Physical Review B;2000-04-15

4. Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy;Journal of Electronic Materials;2000-04

5. Nature of the impurity bands of the edge luminescence of highly doped compensated ZnSe:N;Journal of Applied Spectroscopy;2000-01

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