Affiliation:
1. Department of Integrated Display Engineering Yonsei University Seoul Korea
2. School of Electrical and Electronic Engineering Yonsei University Seoul Korea
Abstract
In this paper, an indium‐gallium‐zinc oxide (IGZO) based phototransistor with an electrohydrodynamic (EHD) jet printed poly (3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) absorption layer has been developed for the absorption of visible light. The PEDOT:PSS absorption layerforms a p‐n junction with IGZO, enhancing the photoresponse through selective carrier transfer of photogenerated carriers. As a result, the proposed phototransistor exhibits improved optoelectronic characteristics such as photoresponsivity of 8.40 × 102 A/W, photosensitivity of 1.12 × 107, detectivity of 8.05 × 1011 Jones under the green light (532 nm) illumination of 5 mW/mm2.